| PART |
Description |
Maker |
| HSXXXA |
Hermetically Sealed, Ultra High Stability, Low Voltage Coefficient, Low Noise, Available in 4 Terminal on HS500 Series
|
Vishay
|
| FPR2-162310RB FPR2-2614100RK FPR2-1617 FPR2-1617R5 |
High Stability Extremly Low-Ohm
|
Willow Technologies Limited
Willow Technologies Ltd
|
| C4700 |
OCXO Ultra-High Stability Excellent Temperature Stability SC-Cut Crystal Crystal
|
VECTRON[Vectron International, Inc]
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122 AP2122AK-3.3TRE1 AP2122AK-1.5TRE1 AP2122AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manufacturing Limited
BCDSEMI
|
| FDN327N |
High performance trench technology for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2122AK-3.0TRG1 AP2122AK-3.3TRG1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| AP2121N-3.0TRE1 AP2121N-3.3TRE1 |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
http://
|
| FDG311N |
High performance trench technology for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| M4500 |
HIGH RELIABILITY FOR LOW COST TEMPERATURE STABILITY OF -1 PPM AVAILABLE
|
PETERMANN-TECHNIK
|
| PMV56XN PMV56XN-01 |
uTrenchMOS (tm) extremely low level FET
From old datasheet system
mTrenchMOS extremely low level FET
|
Philips
|
| AMS3406 |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
